TRANSMISSION CHANNELING STUDY OF THE AU/SI(100) INTERFACE

被引：10

作者：

JIN, HS

ITO, T

GIBSON, WM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573356

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：942 / 945

页数：4

共 18 条

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[4] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J].

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SILVERMAN, PJ ;

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JACKMAN, TE ;

STENSGAARD, I .

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[5]

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[6]

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[7]

HIRAKI A, 1981, ELECTROCHEM SOC J, V127, P2662

[8] NOBLE-METAL SI(111) INTERFACES STUDIED BY MEV ION-SCATTERING [J].

ITO, T ;

GIBSON, WM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :561-565

[9]

Jin H.-Q., UNPUB

[10]

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