ADVANCES IN CHARACTERIZING AND CONTROLLING METAL-SEMICONDUCTOR INTERFACES

被引:3
作者
BRILLSON, LJ
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APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期
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10.1016/0378-5963(85)90228-4
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页码:948 / 968
页数:21
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共 91 条
[61]  
PRAMANIK D, 1983, SOLID STATE TECHNOL, V26, P127
[62]  
RICHTER HW, 1984, 17TH P INT C PHYSICS
[63]  
RICHTER SW, 1984, J VACUUM SCI TECHN B, V1
[64]   METAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS [J].
ROWE, JE ;
CHRISTMAN, SB ;
MARGARITONDO, G .
PHYSICAL REVIEW LETTERS, 1975, 35 (21) :1471-1475
[65]   MICROSCOPIC PROPERTIES AND BEHAVIOR OF SILICIDE INTERFACES [J].
RUBLOFF, GW .
SURFACE SCIENCE, 1983, 132 (1-3) :268-314
[66]  
SCHLUTER M, 1983, THIN SOLID FILMS, V93, P3
[67]  
Seah M P, 1979, SURF INTERFACE ANAL, V1, P2, DOI DOI 10.1002/SIA.740010103
[68]   AUGER DEPTH PROFILING STUDIES OF INTERDIFFUSION AND CHEMICAL TRAPPING AT METAL-INP INTERFACES [J].
SHAPIRA, Y ;
BRILLSON, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :618-622
[69]  
Shapira Y., UNPUB
[70]   INVESTIGATION OF THE MECHANISM FOR SCHOTTKY-BARRIER FORMATION BY GROUP-III METALS ON GAAS(110) [J].
SKEATH, P ;
LINDAU, I ;
CHYE, PW ;
SU, CY ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1143-1148