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ADVANCES IN CHARACTERIZING AND CONTROLLING METAL-SEMICONDUCTOR INTERFACES

被引：3
作者：
BRILLSON, LJ
机构：
来源：
APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期
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D O I：
10.1016/0378-5963(85)90228-4
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页码：948 / 968
页数：21
相关论文
共 91 条
[71]  
SLOWIK J, UNPUB
[72]   UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY ;
CHYE, P .
PHYSICAL REVIEW LETTERS, 1980, 44 (06) :420-423
[73]   NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].
SPICER, WE ;
CHYE, PW ;
SKEATH, PR ;
SU, CY ;
LINDAU, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433
[74]   UNIFIED DEFECT MODEL AND BEYOND [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027
[75]   CDS-CU INTERFACE FORMATION - A MICROSCOPIC STUDY OF THE INTER-DIFFUSION AND CHEMICAL PROCESSES [J].
STOFFEL, NG ;
DANIELS, RR ;
MARGARITONDO, G ;
BRUCKER, CF ;
BRILLSON, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :701-704
[76]  
TSANG JC, J VACUUM SCI TECHNOL
[77]  
Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359
[78]   INFLUENCE OF VOLUME DOPE ON FERMI LEVEL POSITION AT GALLIUM ARSENIDE SURFACES [J].
VANLAAR, J ;
SCHEER, JJ .
SURFACE SCIENCE, 1967, 8 (03) :342-&
[79]  
VONKAUER E, 1958, Z NATURFORSCH, V139, P531
[80]  
WAGMAN DD, 1968, NBS2705 TECHN NOT
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