AXIAL CHANNELING STUDIES OF HETEROEPITAXIAL IN0.25GA0.75AS ON GAAS

被引：2

作者：

YIN, SD ^{[1
]}

WU, CW ^{[1
]}

ZHANG, JP ^{[1
]}

LIU, JR ^{[1
]}

ZHU, PR ^{[1
]}

WANG, Y ^{[1
]}

机构：

[1] CHINESE ACAD SCI, INST PHYS, BEIJING, PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 10期

关键词：

CRYSTALS - Epitaxial Growth - SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

10.1016/0038-1098(88)90918-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Axial channeling results are presented for the analysis of the heteroepitaxial growth structure of In//0//. //2//5Ga//0//. //7//5As on LT AN BR 100 RT AN BR GaAs by MBE. The strain measurements have utilized inclined-direction axial dechanneling and angular scans. Anomalously large dechanneling along the declined LT AN BR 110 RT AN BR axis relative to the LT AN BR 100 RT AN BR growth direction indicates the presence of lattice strain due to lattice mismatch. Imperfections or lattice defects in dislocation nature in the epitaxial layer also give rise to significant dechanneling.

引用

页码：1181 / 1183

页数：3

共 8 条

[1] ION DECHANNELING DUE TO LATTICE STRAINS IN SEMICONDUCTOR SUPER-LATTICES [J].