RBS TOMOGRAPHY OF SOI STRUCTURES USING A MEV ION MICROPROBE

被引：10

作者：

KINOMURA, A

TAKAI, M

NAMBA, S

SATOU, M

CHAYAHARA, A

机构：

[1] GOVT IND RES INST,IKEDA,OSAKA 563,JAPAN

[2] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 45卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(90)90891-W

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Germanium patterns having a semiconductor-on-insulator (SOI) structure were inspected by Rutherford backscattering (RBS) analysis using a 1.8 MeV H+2 microprobe. Tomographic images of the Ge layer embedded in SiO2 layers for capping and isolation were obtained by scanning the microprobe over the sample without removing the upper layer. The tomographic images revealed an abrupt transition from a normal to an overheating condition during a zone-melting recrystallization (ZMR) process. An agglomeration of the Ge pattern, whose thickness was 3.1 times greater than the normal thickness, was observed. © 1990.

引用

页码：523 / 526

页数：4

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