VAPOR GROWTH OF INASXP1-X

被引：15

作者：

MIZUNO, O ^{[1
]}

ARAI, K ^{[1
]}

机构：

[1] NIPPON ELECTR CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 12期

关键词：

D O I：

10.1143/JJAP.13.1955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1955 / 1958

页数：4

共 20 条

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ALLEN, HA ;

MEHAL, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (08) :1081-&

[2] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX [J].

ANTYPAS, GA ;

YEP, TO .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3201-&

[3] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS [J].

BAN, VS .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :19-&

[4] THERMOCHEMICAL CALCULATIONS OF SYSTEM ASH3-PH3-HCL-GA-H2 FOR GAASP VAPOR GROWTH [J].

BLEICHER, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (01) :109-114

[5] THERMODYNAMIC CALCULATIONS FOR GAAS1-XPX VAPOR GROWTH [J].

BLEICHER, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :613-&

[6] ELECTRON-MICROPROBE CHARACTERIZATION OF VAPOR-GROWN INAS1-XPX LAYERS [J].

BUCKMELT.JR ;

KENNEDY, JK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :133-134

[7] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J].

FAWCETT, W ;

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1969, 5 (14) :313-&

[8]

HALES MC, 1970, 3RD P INT S GAAS, P50

[9]

HURLE DTJ, 1967, 1966 P INT C CRYST G, P241

[10]

JAMES LW, 1970, 3 P INT S GALL ARS, P195

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