HIGH-TEMPERATURE STABILITY OF CRSI(W)-N FILMS

被引:9
作者
BRUCKNER, W [1 ]
GRIESSMANN, H [1 ]
MONCH, JI [1 ]
SCHUBERT, G [1 ]
HEINRICH, A [1 ]
机构
[1] SMT & HYBRID GMBH,O-8012 DRESDEN,GERMANY
关键词
D O I
10.1016/0040-6090(92)90807-N
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The annealing characteristics of resistive Cr74Si24W2-N films were investigated at different nitrogen contents. In addition to studies of the stability up to about 450-degrees-C, the high temperature stability was measured at storage up to about 600-degrees-C, especially over the resistivity range 1800-2700 muOMEGA cm. As to the resistance drift, continuation of the annealing processes in the internal part of the films dominates during temperature storage down to about 100 K below the annealing temperature. At lower temperatures surface processes prevail. In favourable cases the resistance drift at 540-degrees-C 100 h amounts to about 3%.
引用
收藏
页码:140 / 146
页数:7
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