DEGRADATION OF CRSI(W)-O RESISTIVE FILMS

被引：18

作者：

BRUCKNER, W

GRIESSMANN, H

SCHREIBER, H

VINZELBERG, H

HEINRICH, A

机构：

[1] Institut für Festkörper - und Werkstofforschung Dresden e.V., 0-8027 Dresden

来源：

THIN SOLID FILMS | 1992年 / 214卷 / 01期

关键词：

D O I：

10.1016/0040-6090(92)90460-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aging behaviour of CrSi(W)-O films with film composition Cr42Si56W2-O has been investigated as a function of the annealing conditions, aging time, storage temperature, film thickness, additional current flow, moist atmosphere and protective layer. Internal processes of the Cr-Si-based resistive film are concluded to play a subordinate role. Rather, the stability is determined by the quality of the surface sheet formed as an oxidized layer or deposited as an additional protective film. A stability DELTA-R/R almost-equal-to 0.01% for 10 000 h at 120-degrees-C has been reached.

引用

页码：84 / 91

页数：8

共 21 条

[1] THERMAL-OXIDATION AND RESISTIVITY OF TANTALUM NITRIDE FILMS [J].