GAAS ALGAAS MATERIAL MODIFICATIONS INDUCED BY FOCUSED GA ION-BEAM IMPLANTATION

被引:16
作者
HIRAYAMA, Y
OKAMOTO, H
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期
关键词
D O I
10.1116/1.584339
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:1018 / 1021
页数:4
相关论文
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