CONDUCTIVITY OF AMORPHOUS HYDROGENATED SILICON IN THE PLANAR AND SANDWICH CONFIGURATIONS

被引：2

作者：

BAPAT, DR

BHATTACHARYA, E

GUHA, S

KRISHNA, KV

机构：

来源：

THIN SOLID FILMS | 1983年 / 99卷 / 04期

关键词：

D O I：

10.1016/0040-6090(83)90058-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：339 / 344

页数：6

共 15 条

[1] THICKNESS DEPENDENT CONDUCTIVITY OF N-TYPE HYDROGENATED AMORPHOUS-SILICON [J].

AST, DG ;

BRODSKY, MH .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :611-616

[2] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[3]

FRITZSCHE H, 1981, AIP C P, V73

[4] DETERMINATION OF THE DENSITY OF STATES OF A-SI-H USING THE FIELD-EFFECT [J].

GOODMAN, NB ;

FRITZSCHE, H ;

OZAKI, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :599-604

[5] ON LIGHT-INDUCED EFFECT IN AMORPHOUS HYDROGENATED SILICON [J].

GUHA, S ;

NARASIMHAN, KL ;

PIETRUSZKO, SM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :859-860

[6] FIELD-EFFECT MEASUREMENT ON THE FILM-SUBSTRATE AND FILM-VACUUM INTERFACES OF A-SI-H [J].

GUHA, S ;

NARASIMHAN, KL ;

NAVKHANDEWALA, RV ;

PIETRUSZKO, SM .

APPLIED PHYSICS LETTERS, 1980, 37 (06) :572-573

[7]

GUHA S, 1980, B MATER SCI, V2, P317

[8] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

MADAN, A ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

[9]

PERRIN J, 1980, J NONCRYST SOLIDS, V37, P447

[10] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J].

SOLOMON, I ;

DIETL, T ;

KAPLAN, D .

JOURNAL DE PHYSIQUE, 1978, 39 (11) :1241-1246

← 1 2 →