FORMATION AND DECAY OF METASTABLE FLUORINE-ATOMS IN PULSED FLUOROCARBON OXYGEN DISCHARGES MONITORED BY LASER-INDUCED FLUORESCENCE

被引:11
作者
HANSEN, SG [1 ]
LUCKMAN, G [1 ]
NIEMAN, GC [1 ]
COLSON, SD [1 ]
机构
[1] YALE UNIV,STERLING CHEM LAB,NEW HAVEN,CT 06511
关键词
D O I
10.1063/1.102692
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temporal profiles of metastable F(4 P3/2) and Ar(1s5) and emitting F(4D05/2) and Ar(2p2) in a sharp-edged, pulsed CF4/O2/Ar (87.5/10.4/2.1) discharge are discussed. All four states are so short lived that there is no net accumulation during the discharge pulse and the profiles merely reflect the formation rate. For Ar, electron impact on the ground state leads to both excited states. Their similar profiles mirror the electron excitation function. For excited F, two channels are open: electron impact on CF 4, and electron impact on ground-state F which accumulates during the discharge pulse. The fact that metastable F is rapidly quenched in the gas phase indicates that it is not a major etchant of silicon or silicon nitride as was recently suggested in the literature.
引用
收藏
页码:719 / 721
页数:3
相关论文
共 25 条
[1]   PRODUCT DISTRIBUTIONS IN THE REACTIONS OF EXCITED NOBLE-GAS ATOMS WITH HALOGEN-CONTAINING COMPOUNDS [J].
BALAMUTA, J ;
GOLDE, MF ;
MOYLE, AM .
JOURNAL OF CHEMICAL PHYSICS, 1985, 82 (07) :3169-3178
[2]  
CASTELLAN GW, 1971, PHYSICAL CHEM
[3]   RADIATIVE LIFETIMES AND 2-BODY DEACTIVATION RATE CONSTANTS FOR AR(3P5, 4P) AND AR(3P5,4P') STATES [J].
CHANG, RSF ;
SETSER, DW .
JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (09) :3885-3897
[4]   SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J].
DAGOSTINO, R ;
CRAMAROSSA, F ;
DEBENEDICTIS, S ;
FERRARO, G .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1259-1265
[5]   OPTICAL DIAGNOSTICS OF LOW-PRESSURE PLASMAS [J].
DREYFUS, RW ;
JASINSKI, JM ;
WALKUP, RE ;
SELWYN, GS .
PURE AND APPLIED CHEMISTRY, 1985, 57 (09) :1265-1276
[6]   IS ELECTRONIC SPIN ANGULAR-MOMENTUM CONSERVED IN GAS SURFACE INTERACTIONS - F AND F+ WITH SI(100) [J].
FIELD, D ;
HYDES, AJ ;
KLEMPERER, DF .
SURFACE SCIENCE, 1986, 171 (03) :654-674
[7]   SPECTROSCOPIC STUDIES OF FLUORESCENT EMISSION IN PLASMA-ETCHING OF SILICON-NITRIDE [J].
FIELD, D ;
KLEMPERER, DF ;
WADE, IT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :551-558
[8]   SPECTROSCOPIC STUDIES OF FLUORESCENT EMISSION IN PLASMA-ETCHING OF SI AND SIO2 AND THE MECHANISM OF GAS-SURFACE INTERACTIONS [J].
FIELD, D ;
HYDES, AJ ;
KLEMPERER, DF .
VACUUM, 1984, 34 (05) :563-578
[9]  
Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[10]   OPTICAL TECHNIQUES IN PLASMA DIAGNOSTICS [J].
GOTTSCHO, RA ;
MILLER, TA .
PURE AND APPLIED CHEMISTRY, 1984, 56 (02) :189-208