SPECTROSCOPIC STUDIES OF FLUORESCENT EMISSION IN PLASMA-ETCHING OF SILICON-NITRIDE

被引:14
作者
FIELD, D
KLEMPERER, DF
WADE, IT
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词
D O I
10.1116/1.584398
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:551 / 558
页数:8
相关论文
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