SPECTROSCOPIC STUDIES OF FLUORESCENT EMISSION IN PLASMA-ETCHING OF SILICON-NITRIDE

被引：14

作者：

FIELD, D

KLEMPERER, DF

WADE, IT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：551 / 558

页数：8

共 30 条

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