MAGNETICALLY EXCITED PLASMA OXIDATION OF INP

被引：4

作者：

FUNYU, A

SATO, S

IKOMA, H

机构：

[1] Science University of Tokyo, Chiba, Noda

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 8A期

关键词：

INDIUM PHOSPHIDE; OXIDATION; MAGNETICALLY EXCITED PLASMA; C-V CHARACTERISTICS; X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1143/JJAP.34.L968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality oxide of InP having an excellent interface with InP was successfully grown with magnetically excited plasma oxidation of InP and annealing at 260 degrees C for 15 min in Oz ambient. Outstanding capacitance-voltage (C-V) characteristics were obtained, which clearly showed both inversion and accumulation behaviors. The C-V curves at 300 K and 80 K coincided well with each other, indicating the absence of frequency dispersion. X-ray photoelectron spectroscopic measurements showed that InPO4, the perfect oxide of InP, was the dominant component species in the oxide with a small amount of In2O3.

引用

页码：L968 / L970

页数：3

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