EFFECTS OF HYDROGEN AND DEPOSITION PRESSURE ON SI1-XGEX GROWTH-RATE

被引：37

作者：

JANG, SM ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.106544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si1-xGex films were deposited at 620-degrees-C by very low pressure chemical vapor deposition. The effects of H-2 dilution and deposition pressure on Si1-xGex growth rate were examined. Under the conditions employed here, both H-2 dilution and deposition pressure were found to affect the growth rate and its peak as a function of Ge incorporation in the film. The suppression of Si1-xGex, growth rate from H-2 at low Ge contents was observed. The growth rate enhancement by increasing deposition pressure is dependent on Ge content and becomes more significant as Ge increases. The implications of these observations for Si1-xGex growth rate are discussed.

引用

收藏

页码：707 / 709

页数：3

相关论文

共 9 条

[1] SILICON SURFACE CLEANING BY LOW-DOSE ARGON-ION BOMBARDMENT FOR LOW-TEMPERATURE (750-DEGREES-C) EPITAXIAL SILICON DEPOSITION .1. PROCESS CONSIDERATIONS [J].

COMFORT, JH ;

GARVERICK, LM ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3388-3397

[2] SILICON VAPOR-PHASE EPITAXIAL-GROWTH CATALYSIS BY THE PRESENCE OF GERMANE [J].

GARONE, PM ;

STURM, JC ;

SCHWARTZ, PV ;

SCHWARZ, SA ;

WILKENS, BJ .

APPLIED PHYSICS LETTERS, 1990, 56 (13) :1275-1277

[3] KINETICS OF SURFACE-REACTIONS IN VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SI FROM SIH4 [J].

GATES, SM ;

KULKARNI, SK .

APPLIED PHYSICS LETTERS, 1991, 58 (25) :2963-2965

[4] LIMITED REACTION PROCESSING - GROWTH OF SI1-XGEX/SI FOR HETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATIONS [J].

HOYT, JL ;

KING, CA ;

NOBLE, DB ;

GRONET, CM ;

GIBBONS, JF ;

SCOTT, MP ;

LADERMAN, SS ;

ROSNER, SJ ;

NAUKA, K ;

TURNER, J ;

KAMINS, TI .

THIN SOLID FILMS, 1990, 184 :93-106

[5] TEMPERATURE-DEPENDENCE OF SI1-XGEX EPITAXIAL-GROWTH USING VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

JANG, SM ;

REIF, R .

APPLIED PHYSICS LETTERS, 1991, 59 (24) :3162-3164

[6] KINETICS OF SILICON-GERMANIUM DEPOSITION BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

KAMINS, TI ;

MEYER, DJ .

APPLIED PHYSICS LETTERS, 1991, 59 (02) :178-180

[7] COOPERATIVE GROWTH PHENOMENA IN SILICON GERMANIUM LOW-TEMPERATURE EPITAXY [J].

MEYERSON, BS ;

URAM, KJ ;

LEGOUES, FK .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2555-2557

[8] TEMPERATURE-DEPENDENCE OF GROWTH OF GEXSI1-X BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J].

RACANELLI, M ;

GREVE, DW .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2524-2526

[9] A MODEL FOR HETEROGENEOUS GROWTH OF SI1-XGEX FILMS FROM HYDRIDES [J].

ROBBINS, DJ ;

GLASPER, JL ;

CULLIS, AG ;

LEONG, WY .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) :3729-3732