LIMITED REACTION PROCESSING - GROWTH OF SI1-XGEX/SI FOR HETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATIONS

被引：46

作者：

HOYT, JL ^{[1
]}

KING, CA ^{[1
]}

NOBLE, DB ^{[1
]}

GRONET, CM ^{[1
]}

GIBBONS, JF ^{[1
]}

SCOTT, MP ^{[1
]}

LADERMAN, SS ^{[1
]}

ROSNER, SJ ^{[1
]}

NAUKA, K ^{[1
]}

TURNER, J ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94303

来源：

THIN SOLID FILMS | 1990年 / 184卷

关键词：

D O I：

10.1016/0040-6090(90)90402-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Limited reaction processing (LRP) of silicon-based materials is reviewed as an alternative growth method to molecular beam epitaxy (MBE). LRP is a chemical vapor deposition technique which uses wafer temperature, rather than gas flow switching, to initiate and terminate growth. Processing takes place within a cold-wall, quartz reaction chamber, and gases are changed between successive lamp-heated growth cycles. In addition to minimizing thermal exposure, the technique allows individual layers in a multi-layer structure to be deposited at their optimum growth temperature. LRP is particularly well suited to the growth and processing of metastable layers such as strained Si1-xGex on silicon. Several properties of LRP-grown Si1-xGex are shown to be similar to those reported for MBE material, including qualitative islanding behavior and quantitative measurement of the onset of misfit dislocation formation. However, a direct comparison of thermal stability reveals larger numbers of misfit dislocations in MBE-grown films upon annealing. The electrical behavior of misfit dislocations in heterojunction diodes, and the growth and analysis of high-quality Si/Si1-xGex/Si heterojunction bipolar transistors are also discussed. © 1990.

引用

页码：93 / 106

页数：14

共 27 条

[1] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].