ELECTRICAL CHARACTERIZATION OF INSITU EPITAXIALLY GROWN SI P-N-JUNCTIONS FABRICATED USING LIMITED REACTION PROCESSING

被引：12

作者：

KING, CA ^{[1
]}

GRONET, CM ^{[1
]}

GIBBONS, JF ^{[1
]}

WILSON, SD ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

ACKNOWLEDGMENT The authors wish to thank D. A. Reynolds of DARPA for his continued interest and support. The authors are also grateful for the assistance of J. L. Hoyt and the staff of the Center for Integrated Systems; especially S. Taylor and R. King;

D O I：

10.1109/55.699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

11

引用

收藏

页码：229 / 231

页数：3

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