PHYSICAL AND ELECTRICAL-PROPERTIES OF SILICON-NITRIDE AND SILICON NITRIDE-INDIUM PHOSPHIDE INTERFACE

被引：10

作者：

FUJIWARA, I

YAJIMA, Y

FUKUZAWA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 09期

关键词：

D O I：

10.1149/1.2097526

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2629 / 2632

页数：4

共 22 条

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