GAIN AND SATURATION IN SEMICONDUCTOR-LASERS

被引：76

作者：

HUANG, J

CASPERSON, LW

机构：

[1] Department of Electrical Engineering, Portland State University, Portland, 97207-0751, OR

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1993年 / 25卷 / 06期

关键词：

D O I：

10.1007/BF00420579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several approaches have been developed for modelling the gain and saturation behaviour of semiconductor lasers, and this study includes a historical review of these various approaches. Special attention is given to rate equation models and to the possibility of so-called gain nonlinearities that might affect the CW and modulation performance of semiconductor lasers. Discussions are mainly limited to the GaAs/GaAlAs and InGaAsP/InP systems, for which the gain and gain nonlinearities have been most extensively studied.

引用

页码：369 / 390

页数：22

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