ELECTROLUMINESCENCE OF INALAS/INGAAS HEMTS LATTICE-MATCHED TO INP SUBSTRATES

被引：54

作者：

SHIGEKAWA, N

ENOKI, T

FURUTA, T

ITO, H

机构：

[1] NTT LSI Laboratories, Atsugi

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 11期

关键词：

D O I：

10.1109/55.468285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroluminescence (EL) due to the electron-hole recombination in the channel of InAlAs/InGaAs HEMT's lattice-matched to InP substrates has been measured at room temperature, The carrier temperature extracted from the obtained spectra has been found to be approximately 300 K. It has also been found that the EL comes from a region between the source and the gate by measuring its spatial distribution. These two features imply that holes generated at the drain edge in the channel due to the impact ionization pile up and recombine the majority electrons between the source and the gate, and agree with results of theoretical analysis.

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页码：515 / 517

页数：3

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