CONDUCTION IN RELAXATION REGIME

被引：25

作者：

DOHLER, GH

HEYSZENAU, H

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] UNIV HAMBURG,INST THEORET PHYS,D-2 HAMBURG,FED REP GER

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.12.641

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：641 / 649

页数：9

共 10 条

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[2]

DOHLER GH, 1974, 5TH P INT C AM LIQ S

[3]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[4]

Fritzsche H., 1974, AMORPHOUS LIQUID SEM

[5]

ILEGEMS M, TO BE PUBLISHED

[6] TRANSPORT IN RELAXATION SEMICONDUCTORS [J].

KIESS, H ;

ROSE, A .

PHYSICAL REVIEW LETTERS, 1973, 31 (03) :153-154

[7] CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME [J].

QUEISSER, HJ ;

CASEY, HC ;

VANROOSB.W .

PHYSICAL REVIEW LETTERS, 1971, 26 (10) :551-&

[8] SHORT COMMENT ON SEMICONDUCTORS IN RELAXATION REGIME [J].

STOCKMANN, F .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 16 (02) :K157-K160

[9] TRANSPORT IN RELAXATION SEMICONDUCTORS [J].

VANROOSB.W ;

CASEY, HC .

PHYSICAL REVIEW B, 1972, 5 (06) :2154-&

[10] ELECTRONIC BASIS OF SWITCHING IN AMORPHOUS SEMICONDUCTOR ALLOYS [J].

VANROOSBROECK, W .

PHYSICAL REVIEW LETTERS, 1972, 28 (17) :1120-+

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