ELECTRICAL CHARACTERISTICS AT 4.2-K AND HIGH MAGNETIC-FIELDS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UTILIZING SPUTTER-DEPOSITED GATE-OXIDE FILMS

被引：1

作者：

SUYAMA, S ^{[1
]}

OKAMOTO, A ^{[1
]}

SHIRAI, S ^{[1
]}

SERIKAWA, T ^{[1
]}

TAKAOKA, S ^{[1
]}

MURASE, K ^{[1
]}

机构：

[1] OSAKA UNIV, FAC SCI, DEPT PHYS, TOYONAKA, OSAKA 560, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 01期

关键词：

D O I：

10.1063/1.350682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) with sputter-deposited gate-oxide films at 4.2 K under high magnetic fields of up to 10 T are presented. The gate-oxide films are deposited by oxygen-argon sputtering of an SiO2 target at 200-degrees-C, much lower than a conventional thermal oxidation temperature of 1000-degrees-C. The MOSFET using a sputter-deposited film has a Hall mobility of 7000 cm2/V s at 4.2 K. The quantum Hall effect and Shubnikov-de Haas oscillations are successfully observed. The magnetic angle dependence of the magnetoresistance and the Shubnikov-de Haas oscillation indicate that this MOSFET has a two-dimensional electron gas. Analysis of the perpendicular magnetoresistance and the quantum Hall effect indicates that this MOSFET has a weakly localized state similar to that of thermal oxide film.

引用

页码：494 / 497

页数：4

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