EPITAXIAL-GROWTH OF HIGHLY FE-DOPED SEMI-INSULATING INP LAYERS BY N2 CARRIER GAS MIXED HYDRIDE VAPOR-PHASE EPITAXY

被引：8

作者：

KURODA, N

SUGOU, S

KOIZUMI, Y

UJI, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 01期

关键词：

D O I：

10.1016/0022-0248(89)90269-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：7 / 12

页数：6

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