EPITAXIAL-GROWTH OF HIGHLY FE-DOPED SEMI-INSULATING INP LAYERS BY N2 CARRIER GAS MIXED HYDRIDE VAPOR-PHASE EPITAXY

[11] DIFFUSION, SOLUBILITY, AND ELECTRICAL-ACTIVITY OF CO AND FE IN INP [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01): : 29 - 35

[12] MOVPE GROWTH AND CHARACTERISTICS OF FE-DOPED SEMIINSULATING INP LAYERS [J]. ELECTRONICS LETTERS, 1986, 22 (23) : 1216 - 1218

[13] SPEIER P, 1987, ELECTRON LETT, V23, P1365

[14] Stoneham A M., 1970, PHYS B, V21, P558, DOI [10.1088/0031-9112/21/12/031/pdf, DOI 10.1088/0031-9112/21/12/031/PDF]

[15] ACTIVATION RATIO OF FE IN FE-DOPED SEMIINSULATING INP EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY AND METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1432 - 1434

[16] PLANAR SURFACE BURIED-HETEROSTRUCTURE INGAASP/INP LASERS WITH HYDRIDE VPE-GROWN FE-DOPED HIGHLY RESISTIVE CURRENT-BLOCKING LAYERS [J]. ELECTRONICS LETTERS, 1986, 22 (23) : 1214 - 1215

[17] TAKANOHASHI T, 1988, JPN J APPL PHYS, V27, P133

[18] FE-DOPED SEMIINSULATING INP GROWN BY CHLORIDE VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4698 - 4700

[11] DIFFUSION, SOLUBILITY, AND ELECTRICAL-ACTIVITY OF CO AND FE IN INP [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01): : 29 - 35

[12] MOVPE GROWTH AND CHARACTERISTICS OF FE-DOPED SEMIINSULATING INP LAYERS [J]. ELECTRONICS LETTERS, 1986, 22 (23) : 1216 - 1218

[13] SPEIER P, 1987, ELECTRON LETT, V23, P1365

[14] Stoneham A M., 1970, PHYS B, V21, P558, DOI [10.1088/0031-9112/21/12/031/pdf, DOI 10.1088/0031-9112/21/12/031/PDF]

[15] ACTIVATION RATIO OF FE IN FE-DOPED SEMIINSULATING INP EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY AND METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1432 - 1434

[16] PLANAR SURFACE BURIED-HETEROSTRUCTURE INGAASP/INP LASERS WITH HYDRIDE VPE-GROWN FE-DOPED HIGHLY RESISTIVE CURRENT-BLOCKING LAYERS [J]. ELECTRONICS LETTERS, 1986, 22 (23) : 1214 - 1215

[17] TAKANOHASHI T, 1988, JPN J APPL PHYS, V27, P133

[18] FE-DOPED SEMIINSULATING INP GROWN BY CHLORIDE VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4698 - 4700