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SIMPLE MICROCOMPUTER-BASED APPARATUS FOR COMBINED DLTS C-V MEASUREMENT
被引:11
作者
:
ASADA, K
论文数:
0
引用数:
0
h-index:
0
ASADA, K
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
SUGANO, T
机构
:
来源
:
REVIEW OF SCIENTIFIC INSTRUMENTS
|
1982年
/ 53卷
/ 07期
关键词
:
D O I
:
10.1063/1.1137098
中图分类号
:
TH7 [仪器、仪表];
学科分类号
:
0804 ;
080401 ;
081102 ;
摘要
:
引用
收藏
页码:1001 / 1006
页数:6
相关论文
共 12 条
[1]
HOW TO DETERMINE PARAMETERS OF DEEP LEVELS BY DLTS SINGLE TEMPERATURE SCANNING
GOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
GOTO, H
ADACHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
ADACHI, Y
IKOMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
IKOMA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(10)
: 1979
-
1982
[2]
IKEDA K, 1980, P APPL PHYS C, P609
[3]
A COMPUTER-CONTROLLED DEEP-LEVEL TRANSIENT SPECTROSCOPY SYSTEM FOR SEMICONDUCTOR PROCESS-CONTROL
JACK, MD
论文数:
0
引用数:
0
h-index:
0
JACK, MD
PACK, RC
论文数:
0
引用数:
0
h-index:
0
PACK, RC
HENRIKSEN, J
论文数:
0
引用数:
0
h-index:
0
HENRIKSEN, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(12)
: 2226
-
2231
[4]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[5]
LEFVRE H, 1977, APPL PHYS, V12, P45
[6]
TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
SCHULZ, M
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
JOHNSON, NM
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(09)
: 622
-
625
[7]
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH10
[8]
TOKUDA Y, 1981, APPL PHYS, V50, P90
[9]
FAST DIGITAL APPARATUS FOR CAPACITANCE TRANSIENT ANALYSIS
WAGNER, EE
论文数:
0
引用数:
0
h-index:
0
WAGNER, EE
HILLER, D
论文数:
0
引用数:
0
h-index:
0
HILLER, D
MARS, DE
论文数:
0
引用数:
0
h-index:
0
MARS, DE
[J].
REVIEW OF SCIENTIFIC INSTRUMENTS,
1980,
51
(09)
: 1205
-
1211
[10]
DETERMINATION OF INTERFACE AND BULK-TRAP STATES OF IGFETS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY
WANG, KL
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
WANG, KL
EVWARAYE, AO
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
EVWARAYE, AO
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(10)
: 4574
-
4577
←
1
2
→
共 12 条
[1]
HOW TO DETERMINE PARAMETERS OF DEEP LEVELS BY DLTS SINGLE TEMPERATURE SCANNING
GOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
GOTO, H
ADACHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
ADACHI, Y
IKOMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
IKOMA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(10)
: 1979
-
1982
[2]
IKEDA K, 1980, P APPL PHYS C, P609
[3]
A COMPUTER-CONTROLLED DEEP-LEVEL TRANSIENT SPECTROSCOPY SYSTEM FOR SEMICONDUCTOR PROCESS-CONTROL
JACK, MD
论文数:
0
引用数:
0
h-index:
0
JACK, MD
PACK, RC
论文数:
0
引用数:
0
h-index:
0
PACK, RC
HENRIKSEN, J
论文数:
0
引用数:
0
h-index:
0
HENRIKSEN, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(12)
: 2226
-
2231
[4]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[5]
LEFVRE H, 1977, APPL PHYS, V12, P45
[6]
TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
SCHULZ, M
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
JOHNSON, NM
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(09)
: 622
-
625
[7]
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH10
[8]
TOKUDA Y, 1981, APPL PHYS, V50, P90
[9]
FAST DIGITAL APPARATUS FOR CAPACITANCE TRANSIENT ANALYSIS
WAGNER, EE
论文数:
0
引用数:
0
h-index:
0
WAGNER, EE
HILLER, D
论文数:
0
引用数:
0
h-index:
0
HILLER, D
MARS, DE
论文数:
0
引用数:
0
h-index:
0
MARS, DE
[J].
REVIEW OF SCIENTIFIC INSTRUMENTS,
1980,
51
(09)
: 1205
-
1211
[10]
DETERMINATION OF INTERFACE AND BULK-TRAP STATES OF IGFETS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY
WANG, KL
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
WANG, KL
EVWARAYE, AO
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
EVWARAYE, AO
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(10)
: 4574
-
4577
←
1
2
→