CALCULATION OF THE SHEAR STRESSES IN (111)-SEMICONDUCTOR AND (001)-SEMICONDUCTOR SUBSTRATES WITH FILM EDGES

被引:2
作者
FISCHER, A
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D O I
10.1002/crat.2170200114
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:65 / 72
页数:8
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共 9 条
[1]   SIMPLE SCHEME FOR DESCRIBING MOTION OF DISLOCATIONS IN SILICON [J].
FISCHER, A .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (10) :1217-1220
[2]  
FISCHER A, 1983, CRYSTAL RES TECHNOL, V19, P1415
[3]  
HU SM, 1979, J APPL PHYS, V50, P4661, DOI 10.1063/1.326575
[4]   METHOD FOR FINDING CRITICAL STRESSES OF DISLOCATION MOVEMENT [J].
HU, SM .
APPLIED PHYSICS LETTERS, 1977, 31 (03) :139-141
[5]   DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS [J].
ISOMAE, S ;
TAMAKI, Y ;
YAJIMA, A ;
NANBA, M ;
MAKI, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1014-1019
[6]   STRESS DISTRIBUTIONS IN SILICON CRYSTAL SUBSTRATES WITH THIN-FILMS [J].
ISOMAE, S .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2782-2791
[7]   FRAMED RECESSED OXIDE SCHEME FOR DISLOCATION-FREE PLANAR SI STRUCTURES [J].
MAGDO, I ;
BOHG, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :932-936
[8]   GENERATION MECHANISM OF DISLOCATIONS IN LOCAL OXIDATION OF SILICON [J].
SHIBATA, K ;
TANIGUCHI, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1383-1387
[9]   EVALUATION OF DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES BY SELECTIVE OXIDATION [J].
TAMAKI, Y ;
ISOMAE, S ;
MIZUO, S ;
HIGUCHI, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :644-648