EVALUATION OF DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES BY SELECTIVE OXIDATION

被引：30

作者：

TAMAKI, Y

ISOMAE, S

MIZUO, S

HIGUCHI, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

10.1149/1.2127474

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：644 / 648

页数：5

共 21 条

[1]

APPELS JA, 1971, PHILIPS RES REP, V26, P157

[2] EMITTER-COLLECTOR SHORTS IN BIPOLAR-DEVICES [J].

BARSON, F .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) :505-510

[3] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J].

BASSOUS, E ;

YU, HN ;

MANISCALCO, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1729-1737

[4] INFLUENCE OF FILM STRESS AND THERMAL-OXIDATION ON GENERATION OF DISLOCATIONS IN SILICON [J].

BOHG, A ;

GAIND, AK .

APPLIED PHYSICS LETTERS, 1978, 33 (10) :895-897

[5]

Bruckner R., 1971, Journal of Non-Crystalline Solids, V5, P177, DOI 10.1016/0022-3093(71)90032-9

[6]

Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0

[7]

DAROGONA FS, 1972, J ELECTROCHEM SOC, V119, P948

[8] VISCOUS-FLOW OF THERMAL SIO2 [J].

EERNISSE, EP .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293

[9] STRESS IN THERMAL SIO2 DURING GROWTH [J].

EERNISSE, FP .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :8-10

[10] CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN [J].

FRANZ, I ;

LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :499-+

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