OXIDATION OF HYDROGEN-TERMINATED SI SURFACES STUDIED BY INFRARED-SPECTROSCOPY

被引：33

作者：

NIWANO, M

KAGEYAMA, J

KINASHI, K

SAWAHATA, J

MIYAMOTO, N

机构：

[1] Research Institute of Electrical Communication, Tohoku University, Sendai

来源：

SURFACE SCIENCE | 1994年 / 301卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)91281-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present the first systematic infrared spectroscopy study to demonstrate the evolution of hydrogen bonding states at early stages of oxidation of hydrogen-terminated Si(100) surfaces exposed to air. We observe spectral features due to intermediate oxidation species, which are generated by attack of the SI-H and back bonds of a surface Si atom by oxygen. The exposure-time dependent concentration of the intermediate oxidation species is calculated within a simple kinetic model in which oxidation is described as a successive conversion of both Si-H and Si-Si bonds around a surface Si atom into the Si-O bond. From comparison of the experimental results with the model calculation, we suggest that oxidation proceeds on the entire surface homogeneously, and also that during exposure of the surface to air Si-H bonds are generated.

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页码：L245 / L249

页数：5

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