ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF HETEROJUNCTIONS

被引：17

作者：

KATNANI, AD

MARGARITONDO, G

ALLEN, RE

DOW, JD

机构：

[1] TEXAS A&M UNIV,DEPT PHYS,COLLEGE STN,TX 77843

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 44卷 / 08期

关键词：

D O I：

10.1016/0038-1098(82)91092-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1231 / 1234

页数：4

相关论文

共 25 条

[21] GE-GAAS (110) INTERFACE - SELF-CONSISTENT CALCULATION OF INTERFACE STATES AND ELECTRONIC-STRUCTURE
PICKETT, WE
LOUIE, SG
COHEN, ML
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (02) : 109 - 112
[22] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
CHYE, P
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (06) : 420 - 423
[23] SURFACE BOND ANGLE AND BOND LENGTHS OF REARRANGED AS AND GA ATOMS ON GAAS(110)
TONG, SY
LUBINSKY, AR
MRSTIK, BJ
VANHOVE, MA
[J]. PHYSICAL REVIEW B, 1978, 17 (08): : 3303 - 3309
[24] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS
VANVECHTEN, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429
[25] VOGL P, J PHYS CHEM SOL