ELECTROABSORPTION AL0.48IN0.52AS P-I-N AVALANCHE PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：2

作者：

CAPASSO, F

ALAVI, K

CHO, AY

HUTCHINSON, AL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 01期

关键词：

D O I：

10.1109/EDL.1984.25815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：16 / 17

页数：2

相关论文

共 5 条

[1] NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].

CAPASSO, F ;

ALAVI, K ;

CHO, AY ;

FOY, PW ;

BETHEA, CG .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1040-1042

[2] HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MALIK, RJ ;

HAYES, JR ;

CAPASSO, F ;

ALAVI, K ;

CHO, AY .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :383-385

[3] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155

[4] ELECTROABSORPTION AVALANCHE PHOTODIODES [J].

STILLMAN, GE ;

WOLFE, CM ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1974, 25 (11) :671-673

[5] AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M [J].

TSANG, WT .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3861-3864