IMPROVEMENT OF THE INTERFACE PROPERTIES OF FLUORIDE GAAS(100) STRUCTURES BY POSTGROWTH ANNEALING

被引：11

作者：

KIM, KH

ISHIWARA, H

ASANO, T

FURUKAWA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2180 / L2182

页数：3

共 11 条

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CAMERON, DC .

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[4] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

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ASANO, T .

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[5]

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[6]

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[7] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].

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PETTIT, GD .

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[8] INTERFACE STATE BAND BETWEEN GAAS AND ITS ANODIC NATIVE OXIDE [J].

SAWADA, T ;

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THIN SOLID FILMS, 1979, 56 (1-2) :183-200

[9] EPITAXIAL-GROWTH OF LATTICE-MATCHED CAXSR1-XF2 ON (100) AND (110) GAAS SUBSTRATES [J].

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MUNOZYAGUE, A .

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[10]

SMITH TP, 1986, MATER RES SOC S P, V54, P295

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