MICROWAVE MULTIPOLAR PLASMA FOR ETCHING AND DEPOSITION

[1] PLASMA-ETCHING IN MAGNETIC MULTIPOLE MICROWAVE-DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 132 - 134

[2] ARNAL Y, UNPUB

[3] STRUCTURAL AND ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY MULTIPOLAR PLASMA-ENHANCED DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1464 - 1472

[4] BURKE R, 1987, VIDE LES COUCHES MIN, V237, P11

[5] THE PERFORMANCE OF A MICROWAVE ION-SOURCE IMMERSED IN A MULTICUSP STATIC MAGNETIC-FIELD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 126 - 130

[6] NEW HIGH INTENSITY ION SOURCE WITH VERY LOW EXTRACTION VOLTAGE [J]. APPLIED PHYSICS LETTERS, 1970, 16 (10) : 401 - &

[7] ION-SOLID INTERACTIONS DURING ION-BEAM DEPOSITION OF GE-74 AND SI-30 ON SI AT VERY LOW ION ENERGIES (0-200 EV RANGE) [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) : 250 - 258

[8] THE ETCHING OF SILICON IN DILUTED SF6 PLASMAS - CORRELATION BETWEEN THE FLUX OF INCIDENT SPECIES AND THE ETCHING KINETICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 657 - 666

[9] REACTIVE ION-BEAM ETCHING USING A BROAD BEAM ECR ION-SOURCE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (01): : L4 - L6

[10] A WAVEGUIDE-BASED LAUNCHER TO SUSTAIN LONG PLASMA COLUMNS THROUGH THE PROPAGATION OF AN ELECTROMAGNETIC SURFACE-WAVE [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1984, 12 (03) : 203 - 214

[1] PLASMA-ETCHING IN MAGNETIC MULTIPOLE MICROWAVE-DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 132 - 134

[2] ARNAL Y, UNPUB

[3] STRUCTURAL AND ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY MULTIPOLAR PLASMA-ENHANCED DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1464 - 1472

[4] BURKE R, 1987, VIDE LES COUCHES MIN, V237, P11

[5] THE PERFORMANCE OF A MICROWAVE ION-SOURCE IMMERSED IN A MULTICUSP STATIC MAGNETIC-FIELD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 126 - 130

[6] NEW HIGH INTENSITY ION SOURCE WITH VERY LOW EXTRACTION VOLTAGE [J]. APPLIED PHYSICS LETTERS, 1970, 16 (10) : 401 - &

[7] ION-SOLID INTERACTIONS DURING ION-BEAM DEPOSITION OF GE-74 AND SI-30 ON SI AT VERY LOW ION ENERGIES (0-200 EV RANGE) [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) : 250 - 258

[8] THE ETCHING OF SILICON IN DILUTED SF6 PLASMAS - CORRELATION BETWEEN THE FLUX OF INCIDENT SPECIES AND THE ETCHING KINETICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 657 - 666

[9] REACTIVE ION-BEAM ETCHING USING A BROAD BEAM ECR ION-SOURCE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (01): : L4 - L6

[10] A WAVEGUIDE-BASED LAUNCHER TO SUSTAIN LONG PLASMA COLUMNS THROUGH THE PROPAGATION OF AN ELECTROMAGNETIC SURFACE-WAVE [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1984, 12 (03) : 203 - 214