MECHANISM OF THE REACTION OF WF6 AND SI

被引：9

作者：

GROENEN, PAC ^{[1
]}

HOLSCHER, JGA ^{[1
]}

BRONGERSMA, HH ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,FAC PHYS,POB 513,5600 MB EINDHOVEN,NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1994年 / 78卷 / 02期

关键词：

D O I：

10.1016/0169-4332(94)00115-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for p(WF6) = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15-20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.

引用

页码：123 / 132

页数：10

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