APPARATUS ELECTRON-BEAM MICROTOMOGRAPHY IN SEM

The methods of SEM ''apparatus'' tomography for layer-by-layer reconstruction of composition, electrical and optical properties are discussed. It is shown that the energy dispersive detection of backscattering electrons or the study of the dependence of the backscattering coefficient on primary electron energy can be considered as examples of such methods. It is shown that the methods of modulated CL and modulated EBIC allow to reconstruct the depth distribution of electrical and optical properties in semiconductor structures. The depth resolution of all methods discussed can achieve 10 nm.