共 19 条
- [1] THEORETICAL-STUDY OF STACKING-FAULTS IN SILICON [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 7979 - 7987
- [2] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
- [5] GAAS FREESTANDING QUANTUM-SIZE WIRES [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) : 3162 - 3171
- [6] ORDERING OF LOWEST CONDUCTION-BAND STATES IN (GAAS)N/(AIAS)M [111] SUPERLATTICES [J]. PHYSICAL REVIEW B, 1992, 46 (23): : 15150 - 15155
- [7] ELECTRONIC-PROPERTIES OF TWIN BOUNDARIES AND TWINNING SUPERLATTICES IN DIAMOND-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1993, 48 (23): : 17181 - 17193
- [9] MATRIX-METHOD FOR TUNNELING IN HETEROSTRUCTURES - RESONANT TUNNELING IN MULTILAYER SYSTEMS [J]. PHYSICAL REVIEW B, 1988, 38 (14): : 9945 - 9951
- [10] CRYSTAL-STRUCTURE CHANGE OF GAAS AND INAS WHISKERS FROM ZINCBLENDE TO WURTZITE TYPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (07): : 2061 - 2065