ADVANCED METALLIZATION OF VERY-LARGE-SCALE INTEGRATION DEVICES

被引：21

作者：

JOSWIG, H

KOHLHASE, A

KUCHER, P

机构：

来源：

THIN SOLID FILMS | 1989年 / 175卷

关键词：

D O I：

10.1016/0040-6090(89)90802-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：17 / 22

页数：6

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共 11 条

[1] APPLICATION OF TI-W BARRIER METALLIZATION FOR INTEGRATED-CIRCUITS
GHATE, PB
BLAIR, JC
FULLER, CR
MCGUIRE, GE
[J]. THIN SOLID FILMS, 1978, 53 (02) : 117 - 128
[2] 2ND-GENERATION 12L-MTL - 20-NS PROCESS-STRUCTURE
HERMAN, JM
EVANS, SA
SLOAN, BJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (02) : 93 - 101
[3] KOHLHASE A, 1989, IN PRESS J APPL PHYS
[4] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2
MURARKA, SP
FRASER, DB
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356
[5] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS
MURARKA, SP
FRASER, DB
SINHA, AK
LEVINSTEIN, HJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 474 - 482
[6] MURARKA SP, 1983, SILICIDES VLSI APPLI
[7] APPLICATION OF LINE-EDGE PROFILE SIMULATION TO THIN-FILM DEPOSITION PROCESSES
NEUREUTHER, AR
TING, CH
LIU, CY
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1449 - 1455
[8] DIFFUSION BARRIERS IN THIN-FILMS
NICOLET, MA
[J]. THIN SOLID FILMS, 1978, 52 (03) : 415 - 443
[9] REFRACTORY-METAL SILICIDES FOR VLSI APPLICATIONS
SINHA, AK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 778 - 785
[10] THOREN P, IN PRESS MICROCIRCUI