SILICON DRY OXIDATION-KINETICS - EFFECTS OF THE CHOICE OF INTEGRATION CONSTANT ON FITS TO THE LINEAR PARABOLIC MODEL

被引：5

作者：

HAN, CJ

HELMS, CR

机构：

[1] Stanford Univ, Stanford, CA, USA, Stanford Univ, Stanford, CA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 02期

关键词：

D O I：

10.1149/1.2100491

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：504 / 507

页数：4

共 12 条

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[10] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - ACCURATE DETERMINATION OF THE KINETIC RATE CONSTANTS [J].

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