2-DIMENSIONAL ELECTRON GASES IN DELTA-DOPED GAAS/IN0.25GA0.75AS/GAAS HETEROSTRUCTURES

被引：20

作者：

LIN, W ^{[1
]}

HSU, WC ^{[1
]}

WU, TS ^{[1
]}

CHANG, SZ ^{[1
]}

WANG, C ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Delta-doped (delta-doped) GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (delta-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The delta-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9 X 10(13) cm-2) can be realized. Experimental results show that a structure with an 80 angstrom In0.25Ga0.75As layer as the active channel and an 80 angstrom spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.

引用

页码：2681 / 2683

页数：3

共 13 条

[1] HIGH-PERFORMANCE INVERTED AND LARGE CURRENT DOUBLE INTERFACE MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH THE BULK (AL,GA)AS REPLACED BY SUPERLATTICE AT THE INVERTED INTERFACE [J].