ELECTRONIC-PROPERTIES AND SCHOTTKY-BARRIER OF THE POROUS SILICON - AU INTERFACE

被引：13

作者：

LAIHO, R

PAVLOV, A

机构：

[1] Wihuri Physical Laboratory, University of Turku

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

CONDUCTIVITY; GOLD; INTERFACES; SILICON;

D O I：

10.1016/0040-6090(94)05671-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the electrical properties of porous silicon layers prepared on one side of a silicon single-crystal wafer and sandwiched with it between two 25 nm thick Au films. When a sum of a constant bias voltage and a voltage pulse are applied over this structure it behaves like a capacitor, with the capacitance decreasing with increasing bias voltage, This phenomenon is attributed to interface defects between the Au film and porous silicon. characterized by a Schottky barrier height of 1.2 eV.

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收藏

页码：276 / 278

页数：3

相关论文

共 19 条

[1] INTERFACE STATES IN A CLEAVED METAL-SILICON JUNCTION [J].

BARRET, C ;

VAPAILLE, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4217-4222

[2] NONLINEAR ELECTRICAL-TRANSPORT IN POROUS SILICON [J].

BENCHORIN, M ;

MOLLER, F ;

KOCH, F .

PHYSICAL REVIEW B, 1994, 49 (04) :2981-2984

[3] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

STOFFEL, NG ;

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5] ELECTRONIC STATES AT SILICIDE-SILICON INTERFACES [J].

HO, PS ;

YANG, ES ;

EVANS, HL ;

WU, X .

PHYSICAL REVIEW LETTERS, 1986, 56 (02) :177-180

[6] ELECTRONIC STATES AND MICROSTRUCTURE AT THE SILICIDE-SILICON INTERFACE [J].

HO, PS ;

RUBLOFF, GW .

THIN SOLID FILMS, 1982, 89 (04) :433-446

[7] VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON [J].

KOSHIDA, N ;

KOYAMA, H .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :347-349

[8] VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON NP HETEROJUNCTION DIODES [J].

NAMAVAR, F ;

MARUSKA, HP ;

KALKHORAN, NM .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2514-2516

[9] CURRENT-INDUCED LIGHT-EMISSION FROM A POROUS SILICON DEVICE [J].

RICHTER, A ;

STEINER, P ;

KOZLOWSKI, F ;

LANG, W .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :691-692

[10] MICROSCOPIC PROPERTIES AND BEHAVIOR OF SILICIDE INTERFACES [J].

RUBLOFF, GW .

SURFACE SCIENCE, 1983, 132 (1-3) :268-314