ON THE FACTORS IMPAIRING THE COMPOSITIONAL TRANSITION ABRUPTNESS IN HETEROJUNCTIONS GROWN BY VAPOR-PHASE EPITAXY

被引：22

作者：

VANOPDORP, C

LEYS, MR

机构：

[1] Philips Research Laboratories, P.O. Box 80.000, JA Eindhoven,5600, Netherlands

[2] Department of Solid State Physics, University of Lund, Box 118, Lund 7,S-220 07, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 02期

关键词：

D O I：

10.1016/0022-0248(87)90142-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：271 / 288

页数：18

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