MODELING OF SILICON-NITRIDE DEPOSITION BY RF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：15

作者：

MASI, M ^{[1
]}

BESANA, G ^{[1
]}

CANZI, L ^{[1
]}

CARRA, S ^{[1
]}

机构：

[1] POLITECN MILAN,DIPARTIMENTO CHIM FIS APPLICATA,I-20133 MILAN,ITALY

来源：

CHEMICAL ENGINEERING SCIENCE | 1994年 / 49卷 / 05期

关键词：

D O I：

10.1016/0009-2509(94)85013-5

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

A one-dimensional mathematical model for the deposition of silicon nitride thin solid films by plasma-enhanced chemical vapor deposition (PECVD) is developed. The electron density and temperature have been evaluated through the ambipolar theory, assuming the Druyvesteyn function as the electron energy distribution function. All the model parameters related to both reaction and mass transport are evaluated a priori. Gas-phase reaction rates have been estimated by means of thermochemical methods. The model predictions are satisfactorily compared with experimental values of deposition rate and composition of the film.

引用

页码：669 / 679

页数：11

共 58 条

[51]

Skelland A.H.P., 1974, DIFFUSIONAL MASS TRA

[52]

SLOVETSKII DI, 1979, KHIM VYS ENERG, V13, P475

[53] MECHANISM OF SINXHY DEPOSITION FROM NH3-SIH4 PLASMA [J].

SMITH, DL ;

ALIMONDA, AS ;

CHEN, CC ;

READY, SE ;

WACKER, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) :614-623

[54]

SUGANO T, 1985, APPLICATION PLASMA P

[55] DIAGNOSTICS AND MODELING OF A METHANE PLASMA USED IN THE CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-CARBON FILMS [J].

TACHIBANA, K ;

NISHIDA, M ;

HARIMA, H ;

URANO, Y .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (08) :1727-1742

[56]

TSU DV, 1986, PHYS REV B, V33, P7096

[57] REACTION-MECHANISMS OF THE RADIO-FREQUENCY GLOW-DISCHARGE DEPOSITION PROCESS IN SILANE-HELIUM [J].

TURBAN, G ;

CATHERINE, Y ;

GROLLEAU, B .

THIN SOLID FILMS, 1979, 60 (02) :147-155

[58] PLASMA DEPOSITION OF SILICON-NITRIDE FILMS IN A RADIAL-FLOW REACTOR [J].

YOO, CS ;

DIXON, AG .

AICHE JOURNAL, 1989, 35 (06) :995-1002

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