GTO THYRISTORS

[1] 2500-V 600-A GATE TURN-OFF THYRISTOR (GTO) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 270 - 274

[2] ANODE CURRENT LIMITING EFFECT OF HIGH-POWER GTOS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 203 - 205

[3] HIGH-POWER GATE TURN-OFF THYRISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 275 - 281

[4] DESIGN CONSIDERATIONS FOR HIGH-POWER GTOS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 93 - 98

[5] Becke H. W., 1980, International Electron Devices Meeting. Technical Digest, P649

[6] LIFETIME CONTROL IN SILICON POWER DEVICES BY ELECTRON OR GAMMA-IRRADIATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1103 - 1108

[7] HASHIMOTO O, 1985, ANN IEEE IAS M, P876

[8] KAWAHIRA K, 1987, TOSHIBA REV, P14

[9] Kurata M., 1982, Semiconductor Devices for Power Conditioning. Proceedings of the Brown Boveri Symposium, P91

[10] KURATA M, 1974, IEEE PESC REC, P125

[1] 2500-V 600-A GATE TURN-OFF THYRISTOR (GTO) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 270 - 274

[2] ANODE CURRENT LIMITING EFFECT OF HIGH-POWER GTOS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 203 - 205

[3] HIGH-POWER GATE TURN-OFF THYRISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 275 - 281

[4] DESIGN CONSIDERATIONS FOR HIGH-POWER GTOS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 93 - 98

[5] Becke H. W., 1980, International Electron Devices Meeting. Technical Digest, P649

[6] LIFETIME CONTROL IN SILICON POWER DEVICES BY ELECTRON OR GAMMA-IRRADIATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1103 - 1108

[7] HASHIMOTO O, 1985, ANN IEEE IAS M, P876

[8] KAWAHIRA K, 1987, TOSHIBA REV, P14

[9] Kurata M., 1982, Semiconductor Devices for Power Conditioning. Proceedings of the Brown Boveri Symposium, P91

[10] KURATA M, 1974, IEEE PESC REC, P125