2500-V 600-A GATE TURN-OFF THYRISTOR (GTO)

被引：13

作者：

AZUMA, M

KURATA, M

TAKIGAMI, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 03期

关键词：

D O I：

10.1109/T-ED.1981.20326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：270 / 274

页数：5

共 11 条

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[3]

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[5]

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[8] ONE-DIMENSIONAL DEVICE MODEL OF THE NPN BIPOLAR-TRANSISTOR INCLUDING HEAVY DOPING EFFECTS UNDER FERMI STATISTICS [J].

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SOLID-STATE ELECTRONICS, 1979, 22 (11) :943-949

[9]

OHASHI H, 1977, TOSHIBA REV, P23

[10] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].

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