EFFECTS OF ELECTRON HEATING ON THE TWO-DIMENSIONAL MAGNETOTRANSPORT IN ALGAAS/GAAS HETEROSTRUCTURES

被引：70

作者：

SAKAKI, H ^{[1
]}

HIRAKAWA, K ^{[1
]}

YOSHINO, J ^{[1
]}

SVENSSON, SP ^{[1
]}

SEKIGUCHI, Y ^{[1
]}

HOTTA, T ^{[1
]}

NISHII, S ^{[1
]}

MIURA, N ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

来源：

SURFACE SCIENCE | 1984年 / 142卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(84)90327-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：306 / 313

页数：8

共 12 条

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[5] A NEW ALGAAS/GAAS HETEROJUNCTION FET WITH INSULATED GATE STRUCTURE (MISSFET)
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OHNO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L122 - L124
[6] 2D HOT-ELECTRON TRANSPORT IN A MODULATION-DOPED GAAS/ALGAAS INTERFACE
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[J]. PHYSICA B & C, 1983, 117 (MAR): : 720 - 722
[7] MAGNETOPHONON RESONANCE IN A TWO-DIMENSIONAL ELECTRON-SYSTEM IN THE GAAS-ALXGA1-XAS HETEROJUNCTION INTERFACE
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MIURA, N
OHNO, H
SAKAKI, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (07) : 2168 - 2173
[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
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HIYAMIZU, S
FUJII, T
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[9] SAKAKI H, 1977, B AM PHYS SOC, V22, P460
[10] ELECTRIC-FIELD INDUCED HEATING OF HIGH MOBILITY ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURES
SHAH, J
PINCZUK, A
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 55 - 57

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