MECHANISM OF ION-ASSISTED ETCHING OF SILICON BY FLUORINE-ATOMS

被引：29

作者：

YARMOFF, JA ^{[1
]}

MCFEELY, FR ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,NATL SYNCHROTRON LIGHT SOURCE,UPTON,NY 11973

来源：

SURFACE SCIENCE | 1987年 / 184卷 / 03期

关键词：

D O I：

10.1016/S0039-6028(87)80365-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：389 / 400

页数：12

共 10 条

[1] ELECTRONIC-STRUCTURE OF THE ANNEALED GE(111) AND SI(111) SURFACES - SIMILARITIES IN LOCAL BONDING
HIMPSEL, FJ
EASTMAN, DE
HEIMANN, P
REIHL, B
WHITE, CW
ZEHNER, DM
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 1120 - 1123
[2] PHOTOEFFECTS ON THE FLUORINATION OF SILICON .2. KINETICS OF THE INITIAL RESPONSE TO LIGHT
HOULE, FA
[J]. JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (10) : 4851 - 4858
[3] A REINVESTIGATION OF THE ETCH PRODUCTS OF SILICON AND XEF - DOPING AND PRESSURE EFFECTS
HOULE, FA
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3018 - 3027
[4] SOFT-X-RAY PHOTOEMISSION-STUDY OF THE SILICON FLUORINE ETCHING REACTION
MCFEELY, FR
MORAR, JF
HIMPSEL, FJ
[J]. SURFACE SCIENCE, 1986, 165 (01) : 277 - 287
[5] SYNCHROTRON PHOTOEMISSION INVESTIGATION OF THE INITIAL-STAGES OF FLUORINE ATTACK ON SI SURFACES - RELATIVE ABUNDANCE OF FLUOROSILYL SPECIES
MCFEELY, FR
MORAR, JF
SHINN, ND
LANDGREN, G
HIMPSEL, FJ
[J]. PHYSICAL REVIEW B, 1984, 30 (02): : 764 - 770
[6] SURFACE CORE-LEVEL SHIFTS FOR CLEAN AND HALOGEN-COVERED GE(100) AND GE(111)
SCHNELL, RD
HIMPSEL, FJ
BOGEN, A
RIEGER, D
STEINMANN, W
[J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8052 - 8056
[7] CHEMICAL SPUTTERING OF FLUORINATED SILICON
TU, YY
CHUANG, TJ
WINTERS, HF
[J]. PHYSICAL REVIEW B, 1981, 23 (02): : 823 - 835
[8] SURFACE PROCESSES IN PLASMA-ASSISTED ETCHING ENVIRONMENTS
WINTERS, HF
COBURN, JW
CHUANG, TJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 469 - 480
[9] THE ETCHING OF W(111) WITH XEF2
WINTERS, HF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 700 - 704
[10] GASEOUS PRODUCTS FROM THE REACTION OF XEF2 WITH SILICON
WINTERS, HF
HOULE, FA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1218 - 1223

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