SIMULATION OF THE ORIENTATION-DEPENDENT GROWTH OF INGAAS/INP BY METALORGANIC VAPOR-PHASE EPITAXY

被引：7

作者：

BAKIN, A ^{[1
]}

ZWINGE, G ^{[1
]}

KLOCKENBRINK, R ^{[1
]}

WEHMANN, HH ^{[1
]}

SCHLACHETZKI, A ^{[1
]}

机构：

[1] TECH UNIV CAROLO WILHELMINA BRAUNSCHWEIG,INST HALBLEITERTECH,D-38106 BRAUNSCHWEIG,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.357272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of InGaAs/InP heterostructures on patterned (100) InP substrates by metalorganic vapor-phase epitaxy (MOVPE) was investigated. Anisotropic growth rates as obtained by measurements were exploited to precisely predict defined growth shapes. We present a model with a complete set of parameters to simulate the growth of In0.53Ga0.47As and InP by MOVPE. The model relies on a graphical construction procedure to determine the cross-sectional structure of heterostructures on patterned substrates.

引用

页码：4906 / 4908

页数：3

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