GROWTH OF INP RELATED-COMPOUNDS ON STRUCTURED SUBSTRATES FOR THE FABRICATION OF NARROW STRIPE LASERS

被引：5

作者：

GRODZINSKI, P ^{[1
]}

OSINSKI, JS ^{[1
]}

MATHUR, A ^{[1
]}

ZOU, Y ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV SO CALIF,NATL CTR INTEGRATED PHOTON TECHNOL,DEPT ELECT ENGN,LOS ANGELES,CA 90089

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90508-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MOCVD growth of InP/InGaAs/InGaAsP multilayer structures on patterned substrates with mesa stripes etched along [110BAR] and [110] crystallographic directions has been investigated. Twinning was found on the groove wall facets for [110BAR] patterns. Twinning alters both growth rate and growth directionality of the layers grown on the mesa top. Structures grown on [110] oriented patterns revealed a discontinuity of the growth between the top of the mesa and the groove region. This isolates the layers grown on the mesa top and allows the fabrication of narrow stripe, buried heterostructure lasers. Both double heterostructure and quantum well structure devices have been fabricated. DH structures with a stripe width of 3 mum exhibited a laser threshold current of 54 mA, while quantum well devices with four strained In0.66Ga0.34As wells and stripe width of 2 mum lased at 35 mA.

引用

页码：507 / 512

页数：6

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