TELLURIUM-IMPLANTED N+ LAYERS IN GAAS

被引：17

作者：

PASHLEY, RD

WELCH, BM

机构：

[1] CALTECH,PASADENA,CA 91109

[2] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期

关键词：

D O I：

10.1016/0038-1101(75)90115-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：977 / 981

页数：5

共 19 条

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[10] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

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APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

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