A NEW CHARGE PUMPING METHOD OF MEASURING SI-SIO2 INTERFACE STATES

被引：56

作者：

TSENG, WL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：591 / 599

页数：9

共 9 条

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[4] SURFACE STATE DENSITY IN MDS STRUCTURES WITH EXTERNAL SOURCE OF MINORITY-CARRIERS [J].

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[5]

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[6]

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[7]

SIMMONS JG, 1973, SOLID STATE ELECTRON, V16, P43, DOI 10.1016/0038-1101(73)90124-X

[8]

TSENG WL, 1985 U CAL BERK M EN

[9] STATIC TECHNIQUE FOR PRECISE MEASUREMENTS OF SURFACE-POTENTIAL AND INTERFACE STATE DENSITY IN MOS STRUCTURES [J].

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APPLIED PHYSICS LETTERS, 1975, 26 (07) :400-402

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