X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF BAND OFFSETS IN A-SI0.2C0.8-H/P-(A-SI-H) AND A-SI0.2C0.8-H/N-(A-SI-H) HETEROJUNCTIONS

被引:5
作者
HIRAI, M
KUSAKA, M
IWAMI, M
AKAO, F
YOSHIMOTO, M
MATSUNAMI, H
机构
[1] OKAYAMA UNIV, FAC TECHNOL, DEPT ELECTR ENGN, OKAYAMA 700, JAPAN
[2] KYOTO UNIV, FAC TECHNOL, DEPT ELECTR ENGN, KYOTO 606, JAPAN
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1989年 / 60卷 / 01期
关键词
D O I
10.1080/13642818908228813
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:51 / 60
页数:10
相关论文
共 15 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[2]  
BEYER W, 1984, SEMICONDUCTORS SEM C, V21, pCH8
[3]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[4]  
HAYASHI T, 1988, JPN J APPL PHYS 2, V27, pL986
[5]   DETERMINATION OF BAND DISCONTINUITY IN AMORPHOUS-SILICON HETEROJUNCTIONS [J].
HAYASHI, T ;
MIYAZAKI, S ;
HIROSE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03) :L314-L316
[6]  
Hirai M., 1989, Reports of the Research Laboratory for Surface Science, Okayama University, V6, P91
[7]   LOW TEMPERATURE REACTIONS AT SI/METAL INTERFACES; WHAT IS GOING ON AT THE INTERFACES? [J].
Hiraki, Akio .
SURFACE SCIENCE REPORTS, 1983, 3 (07) :357-412
[8]   PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS [J].
IBARAKI, N ;
FRITZSCHE, H .
PHYSICAL REVIEW B, 1984, 30 (10) :5791-5799
[9]   PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J].
KRAUT, EA ;
GRANT, RW ;
WALDROP, JR ;
KOWALCZYK, SP .
PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1620-1623
[10]   SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
KRAUT, EA ;
GRANT, RW ;
WALDROP, JR ;
KOWALCZYK, SP .
PHYSICAL REVIEW B, 1983, 28 (04) :1965-1977