TEMPERATURE-DEPENDENT PREFERENTIAL SPUTTERING IN COSI2 AND NBSI2

被引:2
作者
AFFOLTER, K
HAMDI, AH
NICOLET, MA
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 37卷 / 01期
关键词
D O I
10.1007/BF00617864
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:19 / 23
页数:5
相关论文
共 15 条
[11]   ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS [J].
MATTESON, S ;
ROTH, J ;
NICOLET, MA .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4) :217-226
[12]  
NICOLET MA, 1983, VLSI ELECTRONICS, V6, P453
[13]  
TEMPLIER C, UNPUB
[14]   INERT-GAS-BUBBLE FORMATION IN THE IMPLANTED METAL-SI SYSTEM [J].
TSAUR, BY ;
LIAU, ZL ;
MAYER, JW ;
SHENG, TT .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :3978-3984
[15]   DYNAMIC ALTERATIONS OF THE SURFACE-COMPOSITION DURING SPUTTERING OF SILICIDES [J].
WIRTH, T ;
ATZRODT, V ;
LANGE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02) :459-466